材料期刊网

SOLID REACTION BETWEEN PRESSLESS SINTERED Si_3N_4 SUBSTRATE AND Ti-DEPOSITED FILM

XIAN Aiping SI Zhongyao Institute of Metal Research , Academia Sinica , Shenyang.China XIAN Aiping Institute of Metal Research.Academia Sinica , Shenyang 110015.China

金属学报(英文版)

The chemical reaction at solid state between the pressless sintered Si_3N_4 substrate and Ti-de- posited film has been studied by X-ray diffraction analysis.The reaction all depends upon the temperature.It seems no reaction below 973 K:Ti_2N and Ti_5Si_3 form from 1073 to 1123 K: TiN and Ti_5Si_3 form at 1173 K,TiN and Ti_5Si_4 form at 1273 K;while the titanium film di- minishes completely.The lattice parameter of Si_3N_4 is unchanging thrioughout postannealing. This implies that the Ti atoms never dissolve into the Si_2N_4 lattice.

关键词: titanium , null , null , null